2SA1964 datasheet(1/2 Pages) ISC

номер детали	2SA1964

подробное описание детали	Complement to Type 2SC5248

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SA1964

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -160V(Min)

·Good Linearity of hFE

·Wide Area of Safe Operation

·Complement to Type 2SC5248

APPLICATIONS

·Power amplifier applications.

·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

PC

Collector Power Dissipation

@Ta=25℃

2

W

Collector Power Dissipation

@TC=25℃

20

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

Аналогичный номер детали - 2SA1964

производитель	номер детали	датащи	подробное описание детали
Rohm	2SA1964	38Kb / 1P	For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)
New Jersey Semi-Conduct...	2SA1964	74Kb / 2P	Silicon PNP Power Transistor
Foshan Blue Rocket Elec...	2SA1964	792Kb / 6P	Silicon PNP transistor in a TO-220F Plastic Package.

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Аналогичное описание - 2SA1964

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	2SA1265	111Kb / 2P	Complement to Type 2SC3182
	2SA1263	111Kb / 2P	Complement to Type 2SC3180
	2SA1606	104Kb / 2P	Complement to Type 2SC4159
	2SB1038	111Kb / 2P	Complement to Type 2SD1310
	2SB989	110Kb / 2P	Complement to Type 2SD1352
	2SB692	90Kb / 2P	Complement to Type 2SD728
	2SB1031	88Kb / 2P	Complement to Type 2SD1435
	2SB612	80Kb / 2P	Complement to Type 2SD582
	2SC3789	185Kb / 2P	Complement to Type 2SA1479
	2SD1683	141Kb / 2P	Complement to Type 2SB1143

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