BF821 datasheet(2/2 Pages) DIOTEC

номер детали	BF821

подробное описание детали	Surface mount Si-Epitaxial PlanarTransistors

PDF	2 Pages

Scroll/Zoom	100%

производитель	DIOTEC [Diotec Semiconductor]

домашняя страница	http://www.diotec.com

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2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

High Voltage Transistors

BF 821, BF 823

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 1)

- V

CE = 20 V, - IC = 25 mA

–

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 10 V, - IC = 10 mA, f = 100 MHz

60 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 30 V, IE = ie = 0, f = 1 MHz

CB0

–

1.6 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BF 820, BF 822

Marking - Stempelung

BF 821 = 1W

BF 823 = 1Y

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