BF554 datasheet(1/2 Pages) DIOTEC

номер детали	BF554

подробное описание детали	Surface mount Si-Epitaxial PlanarTransistors

PDF	2 Pages

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производитель	DIOTEC [Diotec Semiconductor]

домашняя страница	http://www.diotec.com

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

2) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2

01.11.2003

BF 554

High Frequency Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

NPN

Power dissipation – Verlustleistung

250 mW

Plastic case

SOT-23

Kunststoffgehäuse

(TO-236)

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2 = E

3 = C

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

A = 25

/C)

Grenzwerte (T

A = 25

/C)

BF 554

Collector-Emitter-voltage

B open

V

CE0

20 V

Collector-Base-voltage

E open

V

CB0

30 V

Emitter-Base-voltage

C open

V

EB0

5 V

Power dissipation – Verlustleistung

P

tot

250 mW 1)

Collector current – Kollektorstrom (dc)

I

C

30 mA

Peak Collector current – Kollektor-Spitzenstrom

I

CM

30 mA

Junction temperature – Sperrschichttemperatur

T

j

150

/C

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

/C

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I

E = 0, VCB = 20 V

I

CB0

–

100 nA

I

E = 0, VCB = 20 V, Tj = 100

/CI

CB0

–

10

:A

DC current gain – Kollektor-Basis-Stromverhältnis 2)

V

CE = 10 V, IC = 1 mA

h

FE

60

–

250

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