BCW68F datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCW 67, BCW 68

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Collector saturation volt. – Kollektor-Sättigungsspg. 1)

- I

C = 100 mA, - IB = 10 mA

- V

CEsat

–

300 mV

- I

C = 500 mA, - IB = 50 mA

- V

CEsat

–

700 mV

Base saturation voltage – Basis-Sättigungsspannung 1)

- I

C = 100 mA, - IB = 10 mA

- V

BEsat

–

1.25 V

- I

C = 500 mA, - IB = 50 mA

- V

BEsat

–

2 V

DC current gain – Kollektor-Basis-Stromverhältnis 1)

- V

CE = 10 V

- I

C = 100

: mA

BCW 67A / 68F

–

BCW 67B / 68G

–

BCW 67C / 68H

–

- V

CE = 1 V

- I

C = 10 mA

BCW 67A / 68F

–

BCW 67B / 68G

120

–

BCW 67C / 68H

180

–

- V

CE = 1 V

- I

C = 100 mA

BCW 67A / 68F

100

160

250

BCW 67B / 68G

160

250

400

BCW 67C / 68H

250

350

630

- V

CE = 2 V

- I

C = 500 mA

BCW 67A / 68F

–

BCW 67B / 68G

–

BCW 67C / 68H

100

–

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 50 mA, f = 100 MHz

–

200 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

6 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- V

EB = 0.5 V, IC = ic = 0, f = 1 MHz

EB0

–

60 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Recommended complementary NPN-transistors

Empfohlene komplementäre NPN-Transistoren

BCW 65, BCW 66

Marking – Stempelung

BCW 67A = DA

BCW 67B = DB

BCW 67C = DC

BCW 68F = DF

BCW 68G = DG

BCW 68H = DH

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