BCW65 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCW 65, BCW 66

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Collector saturation volt. – Kollektor-Sättigungsspg. 1)

C = 100 mA, IB = 10 mA

CEsat

–

300 mV

C = 500 mA, IB = 50 mA

CEsat

–

700 mV

Base saturation voltage – Basis-Sättigungsspannung 1)

C = 100 mA, IB = 10 mA

BEsat

–

1.25 V

C = 500 mA, IB = 50 mA

BEsat

–

2 V

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 10 V, IC = 100

BCW 65A / 66F

–

BCW 65B / 66G

–

BCW 65C / 66H

–

CE = 1 V, IC = 10 mA

BCW 65A / 66F

–

BCW 65B / 66G

110

–

BCW 65C / 66H

180

–

CE = 1 V, IC = 100 mA

BCW 65A / 66F

100

160

250

BCW 65B / 66G

160

250

400

BCW 65C / 66H

250

350

630

CE = 2 V, IC = 500 mA

BCW 65A / 66F

–35–

BCW 65B / 66G

–60–

BCW 65C / 66H

–

100

–

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 50 mA, f = 100 MHz

–

170 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

6 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

EB = 0.5 V, IC = ic = 0, f = 1 MHz

EB0

–

60 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW 67, BCW 68

Marking – Stempelung

BCW 65A = EA

BCW 65B = EB

BCW 65C = EC

BCW 66F = EF

BCW 66G = EG

BCW 66H = EH

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