High Isolation, Silicon SPDT,

Nonreflective Switch, 0.1 GHz to 6.0 GHz

Data Sheet

HMC8038

Rev. A

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FEATURES

Nonreflective, 50 Ω design

High isolation: 60 dB typical

Low insertion loss: 0.8 dB typical

High power handling

34 dBm through path

29 dBm terminated path

High linearity

0.1 dB compression (P0.1dB): 35 dBm typical

Input third-order intercept (IP3): 60 dBm typical

ESD ratings

4 kV human body model (HBM), Class 3A

1.25 kV charged device model (CDM)

Single positive supply

3.3 V to 5 V

1.8 V-compatible control

All off state control

Pin compatible with the HMC849ALP4CE

APPLICATIONS

Cellular/4G infrastructure

Wireless infrastructure

Automotive telematics

Mobile radios

Test equipment

FUNCTIONAL BLOCK DIAGRAM

12

11

10

1

3

4

9

2

RFC

NC

RF2

GND

GND

RF1

HMC8038

50Ω

50Ω

PACKAGE

BASE

Figure 1.

GENERAL DESCRIPTION

The HMC8038 is a high isolation, nonreflective, 0.1 GHz to

6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a

leadless, surface-mount package. The switch is ideal for cellular

infrastructure applications, yielding up to 62 dB of isolation up to

4.0 GHz, a low 0.8 dB of insertion loss up to 4.0 GHz, and 60 dBm

of input third-order intercept. Power handling is excellent up to

6.0 GHz, and it offers an input power for an 0.1 dB compression

a single, positive supply voltage from 3.3 V to 5 V, as well as a

single, positive voltage control from 0 V to 1.8 V/3.3 V/5.0 V at

very low dc currents. An enable input (EN) set to logic high

places the switch in an all off state, in which RFC is reflective.

The HMC8038 has ESD protection on all device pins, including

the RF interface, and can stand 4 kV HMB and 1.25 kV CDM.

The HMC8038 offers very fast switching and RF settling times of

150 ns and 170 ns, respectively. The device comes in a RoHS-

compliant, compact 4 mm × 4 mm LFCSP.