поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

BC856W датащи(PDF) 2 Page - Diotec Semiconductor

номер детали BC856W
подробное описание детали  Surface mount Si-Epitaxial PlanarTransistors
PDF  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  DIOTEC [Diotec Semiconductor]
домашняя страница  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC856W датащи(HTML) 2 Page - Diotec Semiconductor

  BC856W Datasheet HTML 1Page - Diotec Semiconductor BC856W Datasheet HTML 2Page - Diotec Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 2 page
background image
1) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
17
01.11.2003
General Purpose Transistors
BC 856W ... BC 860W
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
- I
C = 10 mA, - IB = 0.5 mA
-V
CEsat
75 mV
300 mV
- I
C = 100 mA, - IB = 5 mA
-V
CEsat
250 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- I
C = 10 mA, - IB = 0.5 mA
- V
BEsat
700 mV
- I
C = 100 mA, - IB = 5 mA
- V
BEsat
850 mV
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- V
CE = 5 V, - IC = 2 mA
- V
BEon
600 mV
650 mV
750 mV
- V
CE = 5 V, - IC = 10 mA
- V
BEon
820 mV
Collector-Base cutoff current – Kollektorreststrom
I
E = 0, - VCB = 30 V
- I
CB0
15 nA
I
E = 0, - VCB = 30 V, Tj = 150
/C- I
CB0
––
4
:A
Emitter-Base cutoff current – Emitterreststrom
I
C = 0, - VEB = 5 V
- I
EB0
100 nA
Gain-Bandwidth Product – Transitfrequenz
- V
CE = 5 V, - IC = 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
10 pF
12 pF
Noise figure – Rauschzahl
- V
CE = 5 V, - IC = 200
:A
R
G = 2 k
S, f = 1 kHz,
)f = 200 Hz
BC 856W...
BC 858W
F
10 dB
BC 859W...
BC860W
4 dB
- V
CE = 5 V, - IC = 200
:A
R
G = 2 k
S, f = 30...15 kHz
BC 859W
F
4 dB
BC 860W
F
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
620 K/W 2)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 846W ... BC 850W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 856AW = 3A
BC 856BW = 3B
BC 857AW = 3E
BC 857BW = 3F
BC 857CW = 3G
BC 858AW = 3J
BC 858BW = 3K
BC 858CW = 3L
BC 859BW = 4B
BC 859CW = 4C
BC 860BW = 4F
BC 860CW = 4G



Html Pages

1 2


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com