2SB955 datasheet(2/2 Pages) ISC

номер детали	2SB955

подробное описание детали	High DC Current Gain- : hFE = 1000(Min)@ IC= -5A

PDF	2 Pages

Scroll/Zoom	100%

производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

Logo

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：

www.iscsemi.cn

isc & iscsemi is registered trademark

isc Silicon PNP Darlington Power Transistor

2SB955

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA, RBE= ∞

-120

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -200mA, IE= 0

-7

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -5A, IB= -10mA

-1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -10A, IB= -0.1A

-3.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= -5A, IB= -10mA

-2.0

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= -10A, IB= -0.1A

-3.5

ICBO

Collector Cutoff Current

VCB= -120V, IE= 0

-100

μ A

ICEO

Collector Cutoff Current

VCE= -100V, RBE= ∞

-10

μ A

hFE

DC Current Gain

IC= -5A; VCE= -3V

1000

20000

Switching times

ton

Turn-on Time

VCC= -30V;

IC= -5A; IB1= -IB2= -10mA

0.8

μ s

toff

Turn-Off Time

4.0

μ s

2SB955 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

2SB955 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

датащи скачать

ссылки URL