2P6M datasheet(1/1 Pages) ISC

номер детали	2P6M

подробное описание детали	Electric blanket,electronic jar,various temperature

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Thyristors

2P6M

APPLICATIONS

·

Electric blanket,electronic jar,various temper-

ature control.

·

Electric sewing machine,speed control of mi-

niature type motor.

·

Light display equipment , lamp dimmer such

as a display for entertainment.

·

Automatic gas lighter, battery charger.

·

Solid state static switches etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

Repetitive peak off-state voltage

600 (note:RGK=1kΩ)

V

VRRM

Repetitive peak reverse voltage

600 (note:RGK=1kΩ)

V

IT(AV)

On-state current

2(Tc=77℃, θ=180°Single phase(1/2wave)

A

ITSM

Surge non-repetitive on-state current

20

A

PGM

Peak gate power dissipation

0.5 (f ≥50Hz, Duty ≤10%)

W

PG(AV)

Average gate power dissipation

0.1

W

IFGM

Peak gate forward current

0.2 (f ≥50Hz, Duty ≤10%)

A

VRGM

Peak gate reverse voltage

6

V

Tj

Junction temperature

-40 to + 125

℃

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

IRRM

Repetitive peak reverse current

VRM=VRRM,Tj=125℃,RGK=1kΩ

100

μ

A

IDRM

Repetitive peak off-state current

VDM=VDRM,Tj=125℃,RGK=1kΩ

100

μ

A

VTM

On-state voltage

ITM=4A

1.8

V

IGT

Gate-trigger current

VDM=6V;RL=100Ω,RGK=1kΩ

100

μ

A

VGT

Gate-trigger voltage

VDM=6V;RL=100Ω,RGK=1kΩ

0.8

V

VGD

Gate non-trigger voltage

VDRM=1/2VDRM,Tj=125℃,RGK=1kΩ

0.2

V

IH

Holding current

VD=24V; RGK=1kΩ,ITM=4A

5

mA

Rth(j-c)

Thermal resistance

Junction to case

10

℃

/W

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