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RFPD3580 датащи(PDF) 3 Page - RF Micro Devices

номер детали RFPD3580
подробное описание детали  GaAs/GaN Power Doubler Hybrid
PDF  8 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPD3580 датащи(HTML) 3 Page - RF Micro Devices

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Revision DS20160304
- 3 of 8 -
Disclaimer: Subject to change without notice
© 2016 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
RFPD3580
RFMD + TriQuint = Qorvo
Parameter
Specification
Unit
Condition
Min
Typ
Max
Distortion Data 40MHz to 550MHz. Test conditions unless otherwise noted:
V+ = 34V; TMB = 35°C; ZS = ZL = 75Ω
CTB
-80
-73
dBc
VO = 63 dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog channels plus 111
digital channels (-6dB offset)[2][3]
XMOD
-75
-68
dBc
CSO
-80
-74
dBc
CIN
58
55
dB
1.
The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2.
79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +41 dBmV to +50.4 dBmV tilted output level, plus 111 digital channels, -
6dB offset relative to the equivalent analog carrier.
3.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6. Composite Triple Beat
(CTB) - The CTB parameter is defined by ANSI/SCTE 6. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband
(selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN
parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).



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