NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A

KSB13005A/KSG13005A/KSU13005A

KSD13005A/KSH13005A/KSH13005AF

CHARACTERISTICS

SYMBOL

RATING

UNIT

TO-

92

TO-

92L

TO-

251(2)

TO-

220

TO-

220F

Collector-Base Voltage

V

CBO

700

V

Collector-Emitter Voltage

V

CEO

400

V

Emitter-Base Voltage

V

EBO

9V

Collector Current(DC)

I

C

4A

Collector Current(Pulse)

I

CP

8A

Base Current

I

B

2A

Collector Dissipation(Tc=25

)

P

C

2.8

3.8

40

75

30

W

Junction Temperature

T

J

150

Storage Temperature

T

STG

-65~150

unless otherwise noted

* Pulse Test: Pulse Width

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Base Breakdown Voltage

V

CBO

I

700

V

Collector-Emitter Breakdown Voltage

V

CEO

I

400

V

Emitter Cut-off Current

I

EBO

V

1

*DC Current Gain

h

FE1

h

FE2

V

V

20

8

40

40

*Collector-Emitter Saturation Voltage

V

I

I

I

0.5

0.8

1

V

V

V

*Base-Emitter Saturation Voltage

V

I

I

1.2

1.6

V

V

Output Capacitance

C

ob

V

65

Current Gain Bandwidth Product

f

T

V

4

Turn on Time

t

on

Vcc=125V, Ic=2A

I

R

0.8

Storage Time

t

stg

4.0

Fall Time

t

F

0.9