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BAS35

Silicon Epitaxial Planar Switching Diode

Features

•

Small package

•

Low forward voltage

•

Fast reverse recovery time

•

Small total capacitance

Applications

•

Ultra high speed switching application

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Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

85

V

Continuous Reverse Voltage

75

V

Forward Current (DC)

Single Diode Loaded

Double Diode Loaded

215

125

mA

Repetitive Peak Forward Current

450

mA

Non-repetitive Peak Forward Surge

Current

at t = 1 s

at t = 1 ms

at t = 1 μs

0.5

1

4

A

Power Dissipation

350

mW

Operating Junction Temperature

150

℃

Storage Temperature Range

- 65 to + 150

℃

3

1

2

Marking

Code:

A3

SOT-23 Plastic Package