MB91F587LD datasheet(176/177 Pages) SPANSION

176 / 177 page

D at aS h ee t

August 22, 2014, MB91F587LA_DS705-00012-2v0-E

173

CONFIDENTIAL

Page

Section

Change Results

137, 139,

141, 143

■ELECTRICAL CHARACTERISTICS

4. AC Characteristics

(4) Multi-function Serial

(4-1) CSIO timing (SMR:MD2-0="010"b)

(4-1-5) When the serial chip select is used

(SCSCR:CSEN=1)

•

Serial clock output signal detect level "H"

(SMR,SCSFR:SCINV=0)

•

Serial chip select inactive level "H"

(SCSCR,SCSFR:CSLVL=1)

(4-1-6) When the serial chip select is used

(SCSCR:CSEN=1)

•

Serial clock output signal detect level "L"

(SMR,SCSFR:SCINV=1)

•

Serial chip select inactive level "H"

(SCSCR,SCSFR:CSLVL=1)

(4-1-7) When the serial chip select is used

(SCSCR:CSEN=1)

•

Serial clock output signal detect level "H"

(SMR,SCSFR:SCINV=0)

•

Serial chip select inactive level "L"

(SCSCR,SCSFR:CSLVL=0)

(4-1-8) When the serial chip select is used

(SCSCR:CSEN=1)

•

Serial clock output signal detect level "L"

(SMR,SCSFR:SCINV=1)

•

Serial chip select inactive level "L"

(SCSCR,SCSFR:CSLVL=0)

The specifications of tCSSI, tCSHI and tCSDI are corrected.

·tCSSI

Min: -50-tCSSU*1

Max: +0-tCSSU*1

↓

Min: tCSSU*1+0

Max: tCSSU*1+50

·tCSHI

Min: +0+tCSHD*2

Max: +50+tCSHD*2

↓

Min: tCSHD*2-50

Max: tCSHD*2+0

·tCSDI

Min: -50+tCSDS*3

Max: +50+tCSDS*3

↓

Min: -50+5tCPP+tCSDS*3

Max: +50+5tCPP+tCSDS*3

146

■ELECTRICAL CHARACTERISTICS

4. AC Characteristics

(4) Multi-function Serial

(4-4) I2C timing (SMR:MD2-0="100"b)

The explanatory note *1 is corrected.

*1: R and C represent the pull-up resistance and load capacitance of the SCL

and SDA output lines, respectively. VP shows that the power supply voltage

of the pull-up resistor and IOL shows the VOL guarantee current.

↓

*1: R and CL represent the pull-up resistance and load capacitance of the

SCL and SDA output lines, respectively. VP shows that the power supply

voltage of the pull-up resistor and IOL shows the VOL guarantee current.

162

■ELECTRICAL CHARACTERISTICS

7. Flash memory

Item name is changed.

(1) Main Flash

↓

(1) Electrical Characteristics

162

■ELECTRICAL CHARACTERISTICS

7. Flash memory

The remark of " Erase cycle*2 / Data retention time " is corrected.

Temperature at writing/erasing

Tj <+105°C

Average temperature TA=+85°C *3

↓

Average temperature TA=+85°C *3

164

■ELECTRICAL CHARACTERISTICS

8. R/D Converter

The remark of " Amplitude" of "Resolver response signal*1 " is added.

More than 2Vp-p

165-168

■EXAMPLE CHARACTERISTICS

"■EXAMPLE CHARACTERISTICS" is newly added.

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