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DF-C10 датащи(PDF) 1 Page - LEM |
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DF-C10 датащи(HTML) 1 Page - LEM |
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1 / 2 page ![]() I PN = 10..500mA DC Current transducer DF-C10 For the electronic mesurement of low DC currents, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit) Electrical data I OC Overload capacity 30 A.t V OUT Analog Output signal @ ±I PN ± 10 V Vc Supply voltage ± 12...15 VDC I C Current consumption (max) 20 mA R L Load resistance ≥ 2 k Ω V d Isolation test voltage1) 5000 VAC Accuracy-Dynamic performance data X Accuracy2) of reading @ ±12V, T A=25°C ± 4 % ε L Linearity2) of I PN ± 0.8 % V OE Electrical Offset Voltage @ T A=25°C @IP=0 ± 50 mV V OT Thermal drift of V OE @ 0..+70° ±100 mV t r Response time @ 90% of I PN <140 mS General data T A Ambient operating temperature 0..+70 °C T S Ambient storage temperature -25..+85 °C m Mass 140 g Standard TBD Features • DC Measurement • Low current transducer •Panel mounting • Bipolar voltage supply • Extended measuring range Advantages • Large aperture • Good performances in harsh EMC environment • High isolation between primary and secondary circuits • Easy to mount •Bipolar •No insertion losses Options on request •DIN mounting Applications • DC leakage current measurement • Differential current measurement in DC applica- tions • Low DC current measurement Notes: 1) Between primary and secondary 2) Excludes the electrical offset LEM Components www.lem.com 020521/0 Primary nominal Primary current Analogue Output Type current range signal I PN (mA.t) I P (mA.t) V OUT (V) 10 16 0-10 DF 0.01 C10 20 38 0-10 DF 0.02 C10 50 80 0-10 DF 0.05 C10 100 160 0-10 DF 0.1 C10 300 480 0-10 DF 0.3 C10 500 800 0-10 DF 0.5 C10 Preliminary |
Аналогичный номер детали - DF-C10 |
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Аналогичное описание - DF-C10 |
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