21

IS42SM/RM/VM32100D

Advanced Information

www.issi.com - dram@issi.com

Rev. 00A | Nov. 2014

Table7B: 2.5V Absolute Maximum Rating

Parameter

Symbol

Rating

Unit

Ambient Temperature (Industrial)

-40 ~ 85

C

Ambient Temperature (Commercial)

0 ~ 70

Storage Temperature

-55 ~ 150

C

Voltage on Any Pin relative to VSS

-1.0 ~ 3.6

V

Voltage on VDD relative to VSS

VDD, VDDQ

-1.0 ~ 3.6

V

Short Circuit Output Current

50

mA

Power Dissipation

1

W

Note :

Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Pin

Symbol

Min

Max

Unit

Input Capacitance

CLK

2

4

pF

A0~A10, BA, CKE, /CS, /RAS, /CAS,

/WE, DQM0~DQM3

2

4

pF

Data Input/Output Capacitance

DQ0~DQ31

3

5

pF

Parameter

Symbol

Min

Typ

Max

Unit

Note

Power Supply Voltage

VDD

2.3

2.5

3.0

V

VDDQ

2.3

2.5

3.0

V

1

Input High Voltage

0.8 x VDDQ

-

VDDQ+0.3

V

2

Input Low Voltage

-0.3

0

0.3

V

3

Output High Voltage

0.9 x VDDQ

-

-

V

Output Low Voltage

-

-

0.2

V

Input Leakage Current

-1

-

1

uA

4

Output Leakage Current

-1.5

1.5

uA

5

Note :

1. VDDQ must not exceed the level of VDD

2. VIH(max) = VDDQ+1.5V AC. The overshoot voltage duration is

 3ns.

3. VIL(min) = -1.0V AC. The overshoot voltage duration is

 3ns.

4. Any input 0V

 VIN  VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

5. DOUT is disabled, 0V

 VOUT  VDDQ.