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CBS10S30 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали CBS10S30
подробное описание детали  Schottky Barrier Diode Silicon Epitaxial
PDF  6 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CBS10S30 датащи(HTML) 2 Page - Toshiba Semiconductor

  CBS10S30 Datasheet HTML 1Page - Toshiba Semiconductor CBS10S30 Datasheet HTML 2Page - Toshiba Semiconductor CBS10S30 Datasheet HTML 3Page - Toshiba Semiconductor CBS10S30 Datasheet HTML 4Page - Toshiba Semiconductor CBS10S30 Datasheet HTML 5Page - Toshiba Semiconductor CBS10S30 Datasheet HTML 6Page - Toshiba Semiconductor  
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CBS10S30
2
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Forward voltage
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
Ct
Test Condition
IF = 0.1 A (Pulse test)
IF = 0.5 A (Pulse test)
IF = 1 A (Pulse test)
VR = 30 V (Pulse test)
VR = 0 V, f = 1 MHz
Min
Typ.
0.23
0.31
0.37
0.2
135
Max
0.45
0.5
Unit
V
V
V
mA
pF
5.
5.
5.
5. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 5.1
5.1
5.1
5.1 Marking
Marking
Marking
Marking
Marking Code
8C
Part Number
CBS10S30
6.
6.
6.
6. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
2014-02-24
Rev.3.0



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