| поискавой системы для электроныых деталей |
|
CBS10S30 датащи(PDF) 2 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
CBS10S30 датащи(HTML) 2 Page - Toshiba Semiconductor |
|
2 / 6 page ![]() CBS10S30 2 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Forward voltage Forward voltage Reverse current Total capacitance Symbol VF(1) VF(2) VF(3) IR Ct Test Condition IF = 0.1 A (Pulse test) IF = 0.5 A (Pulse test) IF = 1 A (Pulse test) VR = 30 V (Pulse test) VR = 0 V, f = 1 MHz Min Typ. 0.23 0.31 0.37 0.2 135 Max 0.45 0.5 Unit V V V mA pF 5. 5. 5. 5. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 5.1 5.1 5.1 5.1 Marking Marking Marking Marking Marking Code 8C Part Number CBS10S30 6. 6. 6. 6. Usage Considerations Usage Considerations Usage Considerations Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 2014-02-24 Rev.3.0 |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |