GaAs SPDT 2.7 V High Power Switch

DC - 3.0 GHz

Rev. V3

MASWSS0204

1

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Features

 Low Voltage Operation: 2.7 V

 High IP3: +56 dBm

 Low Insertion Loss: 0.30 dB at 1 GHz

 High Isolation: 25 dB at 1 GHz

 0.5 micron GaAs PHEMT Process

 Lead-Free SC70 Package

 Halogen-Free ―Green‖ Mold Compound

 260°C Reflow Compatible

 RoHS* Compliant Version of MASWSS0117

Description

The MASWSS0204 is a GaAs pHEMT MMIC single

pole double throw (SPDT) high power switch in a low

cost SC70 six lead package. The MASWSS0204 is

ideally suited for applications where high power, low

control voltage, low insertion loss, high isolation,

small size and low cost are required.

Typical applications are for CDMA

handset

systems that connect separate transceiver and/or

GPS functions to a common antenna, as well as

other

related

handset

and

general

purpose

applications. The MASWSS0204 can be used in all

systems operating up to 3 GHz requiring high power

at low control voltage.

The MASWSS0204 is fabricated using a 0.5 micron

gate length GaAs pHEMT process. The process

features full passivation for performance and

reliability.

Functional Block Diagram

V1

RFC

V2

RF1

GND

RF2

39 pF

39 pF

Pin 6

Pin 1

39 pF

Pin Configuration

Pin No.

Pin Name

Description

1

V2

Vcontrol 2

2

RFC

RF Common

3

V1

Vcontrol 1

4

RF1

RF Port 1

5

GND

RF Ground

6

RF2

RF Port 2

Part Number

Package

MASWSS0204

Bulk Packaging

MASWSS0204TR-3000

3000 piece reel

MASWSS0204SMB

Sample Test Board

MASWSS0204 orientation in tape

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

1. Reference Application Note M513 for reel size information.

2. All sample boards include 5 loose parts.

Note:

Device supplied on tape and reel is the reverse

orientation of that shown in Application Note M513.