DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120305

BAS19W/20W/21W

SOT-323 Plastic-Encapsulate DIODE

SWITCHING DIODE

SOT323

Unit:inch(mm)

Min

Max

Min

Max

A

0.900

1.100

0.035

0.043

A1

0.000

0.100

0.000

0.004

A2

0.900

1.000

0.035

0.039

b

0.200

0.400

0.008

0.016

c

0.080

0.150

0.003

0.006

D

2.000

2.200

0.079

0.087

E

1.150

1.350

0.045

0.053

E1

2.150

2.450

0.085

0.096

e

e1

1.200

1.400

0.047

0.055

L

L1

0.260

0.460

0.010

0.018

θ

0°

8°

0°

8°

0.525 REF

0.021 REF

Symbol

Dimensions In Millimeters

Dimensions In Inches

0.650 TYP

0.026 TYP

FEATURES

Power dissipation

200

mW (Tamb=25℃)

Collector current

200

mA

Collector-base voltage

19W: 120 V; 20W: 150V ; 21W: 200V

Operating and storage junction temperature range

•

High temperature soldering : 260

•

Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

BAS19W

Reverse breakdown voltage

BAS20W

BAS21W

100

150

200

V

BAS19W

Reverse voltage leakage current

BAS20W

BAS21W

100V

200V

0.1

µA

Forward voltage

1000

1250

mV

Diode capacitance

5

pF

Reveres recovery time

50

nS

H