High Power GaAs SPDT Switch

DC - 2.0 GHz

Rev. V4

MASWSS0161

1

1

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1

Features

 Positive Supply and Control Voltages

 1 dB Compression Point: 36 dBm @ 8 V

 3rd Order Intercept Point: 65 dBm @ 8 V

 Low Insertion Loss: 0.4 dB

 Low Power Consumption: 100 µW

 Fast Switching Speed

 Lead-Free SOIC-8 Plastic Package

 Halogen-Free “Green” Mold Compound

 260°C Re-flow Compatible

 RoHS* Compliant Version of SW-277

Description

The MASWSS0161 is a GaAs MMIC SPDT switch in

a lead free SOIC-8 lead surface mount plastic

package. This device is ideally suited for use where

low

power

consumption

is

required.

Typical

applications

include

transmit/receive

switching,

switch matrices and switched filter banks in systems

such as radio and cellular equipment, PCM, GPS,

fiber optic modules, and other battery powered radio

equipment.

The MASWSS0161 is fabricated using a monolithic

GaAs MMIC using a mature 1 micron process. The

process features full chip passivation for increased

performance and reliability.

Part Number

Package

MASWSS0161

Bulk Packaging

MASWSS0161TR

1000 piece reel

MASWSS0161SMB

Sample Test Board

Functional Schematic

8

7

6

5

1

2

3

4

Pin No.

Pin Name

Description

1

GND

Ground, Thermal Contact

2

Drain Voltage

3

RFC

RF Common Port

4

GND

Ground, Thermal Contact

5

RF1

RF Port 1

6

Control 1

7

Control 2

8

RF2

RF Port 2

3. External DC blocking capacitors required on all RF ports.

1. Reference Application Note M513 for reel size information.

2. All sample boards include 5 loose parts.

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.