SD103AX datasheet(1/3 Pages) CHENDA

номер детали	SD103AX

подробное описание детали	Schottky Barrier Diode

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производитель	CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]

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Schottky Barrier Diode

SD103AX

FEATURES

Low forward voltage drop.

Guard ring construction for transient protection.

Low reverse recovery time.

Low reverse capacitance.

APPLICATIONS

SOD-523

Schottky barrier application.

ORDERING INFORMATION

Type No.

Marking

Package Code

SD103AX

S4

SOD-523

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

DC Reverse voltage

VR

40

V

Continuous forward current

IF

350

mA

Repetitive peak forward current @t≤1.0s

IFRM

1

A

Total power dissipation

Ptot

200

mW

Junction temperature

Tj

125

℃

Storage temperature

Tstg

-65 to +125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse breakdown voltage

V(BR)R

40

V

IR=100μA

Forward voltage

VF

0.37

0.60

V

IF=20mA

IF=200mA

Reverse current

IR

5.0

μ

A

VR=30V

Diode capacitance

Cd

50

pF

VR=0V,f=1MHz

Reverse recovery time

trr

10

ns

IF=IR=50mA,RL=100Ω

Pb

Lead-free

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Аналогичное описание - SD103AX

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