MICROWAVE CORPORATION

8 - 265

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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8

HMC463LP5

v00.0404

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2.0 - 20.0 GHz

Outline Drawing

Absolute Maximum Ratings

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

3. DIE THICKNESS IS 0.004 (0.100)

4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE

5. BACKSIDE METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND

7. BOND PAD METALIZATION: GOLD

Drain Bias Voltage (Vdd)

+9.0 Vdc

Gate Bias Voltage (Vgg1)

-2.0 to 0 Vdc

Gate Bias Voltage (Vgg2)(AGC)

(Vdd -9.0)

Vdc to +2.0 Vdc

RF Input Power (RFin)(Vdd = +5.0 Vdc)

+23 dBm

Channel Temperature

150 °C

Continuous Pdiss (T= 85 °C)

(derate 50 mW/°C above 85 °C)

3.25 W

Thermal Resistance

(channel to ground paddle)

20 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (V)

Idd (mA)

+4.5

58

+5.0

60

+5.5

62

Typical Supply Current vs. Vdd

Gain @ Several Control Voltages

-12

-10

-8

-6

-4

-2

0

2

4

6

8

10

12

14

16

18

0

2

4

6

8

10

12

14

16

18

20

22

Vgg-1.3 V

Vgg=-1.2 V

Vgg=-1.1 V

Vgg=-1.0V

Vgg=-0.9 V

Vgg=-0.8 V

Vgg=-0.6 V

Vgg=-0.4 V

Vgg=-0.2 V

Vgg=0 V

FREQUENCY (GHz)