MICROWAVE CORPORATION

8 - 207

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC441LP3

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.5 - 13.5 GHz

v01.0604

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+6.0 Vdc

Gate Bias Voltage (Vgg1,Vgg2)

-8.0 to 0 Vdc

RF Input Power (RFin)(Vdd = +5.0 Vdc)

+20 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 10 mW/°C above 85 °C)

0.65 W

Thermal Resistance

(channel to ground paddle)

100 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (V)

Idd (mA)

+5.5

81

+5.0

80

+4.5

79

+3.3

72

+3.0

71

Note: Amplifier will operate over full voltage range shown above

NOTES:

1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB

LAND PATTERN.

Typical Supply Current vs. Vdd