MICROWAVE CORPORATION

8 - 167

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

Outline Drawing

Absolute Maximum Ratings

HMC408LP3

GaAs InGaP HBT MMIC 1 WATT

POWER AMPLIFIER, 5.1 - 5.9 GHz

v02.0604

Typical Supply Current

vs. Vs= Vcc1 + Vcc2

Note: Amplifier will operate over full voltage range shown above

Vs (V)

Icq (mA)

4.75

725

5.0

750

5.25

780

Collector Bias Voltage (Vcc1, Vcc2)

+5.5 Vdc

Control Voltage (Vpd)

+5.5 Vdc

RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)

+20 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 72.5 mW/°C above 85 °C)

4.71 W

Thermal Resistance

(junction to ground paddle)

13.8 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

NOTES:

1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB

LAND PATTERN.