TBAV99 datasheet(2/5 Pages) TOSHIBA

номер детали	TBAV99

подробное описание детали	Switching Diodes Silicon Epitaxial Planar

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

Logo

2 / 5 page

TBAV99

4. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Forward voltage

Reverse current

Total capacitance

Reverse recovery time

Symbol

VF(1)

VF(2)

VF(3)

VF(4)

IR(1)

IR(2)

trr

Test Condition

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

VR = 25 V

VR = 80 V

VR = 0 V, f = 1 MHz

IF = 10 mA

See Fig. 4.1.

Min



Typ.



Max

0.715

0.855

1.0

1.25

0.5

1.5

4.0

Unit

µA

Fig.

Fig. 4.1

4.1

4.1 Reverse recovery time (t

Reverse recovery time (t

Reverse recovery time (trr

) Test circuit

5. Marking

Marking

Fig.

Fig. 5.1

5.1

5.1 Marking

Marking

6. Land Pattern Dimensions (for reference only)

Land Pattern Dimensions (for reference only)

Fig.

Fig. 6.1

6.1

6.1 SOT23 (Unit: mm)

SOT23 (Unit: mm)

2015-11-26

Rev.2.0

TBAV99 датащи(PDF) 2 Page - Toshiba Semiconductor

TBAV99 датащи(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL