MICROWAVE CORPORATION

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8

HMC375LP3

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 1.7 - 2.2 GHz

v01.0604

General Description

Features

Functional Diagram

The HMC375LP3 high dynamic range GaAs

PHEMT MMIC Low Noise Amplifier is ideal for

GSM & CDMA cellular basestation front-end

receivers operating between 1.7 and 2.2 GHz.

This LNA has been optimized to provide 0.9 dB

noise figure, 17 dB gain and +33 dBm output IP3

from a single supply of +5.0V @ 136mA. Input and

output return losses are 14 dB typical with the LNA

requiring minimal external components to optimize

the RF input match, RF ground and DC bias. The

HMC375LP3 shares the same package with the

HMC356LP3 and HMC372LP3 high IP3 LNAs.

A low cost, leadless 3x3 mm (LP3) SMT QFN

package houses the low noise amplifier.

Noise Figure: 0.9 dB

+34 dBm Output IP3

Gain: 17 dB

Very Stable Gain vs. Supply & Temperature

Single Supply: +5.0 V @ 136 mA

50 Ohm Matched Output

Typical Applications

The HMC375LP3 is ideal for

basestation receivers:

• GSM, GPRS & EDGE

• CDMA & W-CDMA

• DECT

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

1.8 - 1.9

1.9 - 2.0

2.0 - 2.1

2.1 - 2.2

GHz

Gain

16.5

18.5

15.5

17.5

15

17

13

15

dB

Gain Variation Over Temperature

0.014

0.021

0.014

0.021

0.014

0.021

0.014

0.021

dB/°C

Noise Figure

1.0

1.35

0.95

1.2

0.9

1.2

0.9

1.3

dB

Input Return Loss

12

13

14

15

dB

Output Return Loss

13

16

11

8

dB

Reverse Isolation

35

34

34

34

dB

Output Power for

1dB Compression (P1dB)

16

18.5

16

18.5

15

18

14.5

17.5

dBm

Saturated Output Power (Psat)

19.5

19.5

19.5

19.5

dBm

Output Third Order Intercept (IP3)

(-20 dBm Input Power per tone,

1 MHz tone spacing)

34

33.5

33

32.5

dBm

Supply Current (Idd)

136

136

136

136

mA