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TLP3083F датащи(PDF) 4 Page - Toshiba Semiconductor

номер детали TLP3083F
подробное описание детали  Photocouplers GaAs Infrared LED and Photo Triac
PDF  19 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP3083F датащи(HTML) 4 Page - Toshiba Semiconductor

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TLP3083,TLP3083F
4
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
LED
Detector
Common
Characteristics
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Junction temperature
Input power dissipation
Input power dissipation derating
Off-state output terminal voltage
R.M.S. on-state current
R.M.S. on-state current derating
ON-state current (pulsed)
Peak non-repetitive surge current
Junction temperature
Output power dissipation
Output power dissipation derating
Total power dissipation
Total power dissipation derating
Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(Ta ≥ 53 )
(Ta ≥ 25 )
(Ta = 25 )
(Ta = 70 )
(Ta ≥ 25 )
(Ta ≥ 25 )
(Ta ≥ 25 )
(10 s)
AC, 60 s, R.H. ≤ 60 %
Symbol
IF
∆IF/∆Ta
IFP
VR
Tj
PD
∆PD/∆Ta
VDRM
IT(RMS)
∆IT(RMS)/∆Ta
IONP
ITSM
Tj
PO
∆PO/∆Ta
PT
∆PT/∆Ta
Topr
Tstg
Tsol
BVS
Note
(Note 1)
(Note 2)
(Note 3)
(Note 4)
Rating
50
-0.7
1
5
125
100
-1.0
800
100
50
-1.1
2
1.2
125
300
-4.0
400
-4.4
-40 to 100
-55 to 125
260
5000
Unit
mA
mA/
A
V
mW
mW/
V
mA
mA
mA/
A
A
mW
mW/
mW
mW/
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 µs, 100 pps
Note 2: Pulse width (PW) ≤ 100 µs, 120 pps
Note 3: Pulse width (PW) ≤ 10 ms
Note 4: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4 and 6 are
shorted together.
8.
8.
8.
8. Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Characteristics
AC mains voltage
Input forward current
ON-state current (pulsed)
Operating temperature
Symbol
VAC
IF
IONP
Topr
Note
(Note 1)
Min
7.5
-25
Typ.
10
Max
480
20
1
85
Unit
V
mA
A
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note 1: AC use only.
2016-02-03
Rev.5.0
©2016 Toshiba Corporation



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