DF2S6.8UCT datasheet(2/7 Pages) TOSHIBA

2 / 7 page

DF2S6.8UCT

4. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

VRWM: Working peak reverse

voltage

VBR: Reverse breakdown voltage

IBR: Reverse breakdown current

VR: Reverse voltage

IR: Reverse current

VF: Forward voltage

IF: Forward current

VC: Clamping voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

Fig.

Fig. 4.1

4.1

4.1 Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Reverse breakdown voltage

Reverse current

Dynamic resistance

Total capacitance

Working peak reverse voltage

Reverse breakdown voltage

Reverse current

Symbol

VRWM(1)

VBR(1)

IR(1)

RDYN

VRWM(2)

VBR(2)

IR(2)

Note

(Note 1)

Test Condition



IBR = 1 mA

VRWM = 5 V

VR = 0 V, f = 1 MHz



IBR = 1 mA

VRWM = 19 V

Min



5.3



Typ.



6.8



0.3

1.6



Max



0.1



0.5

Unit

µA

Ω

µA

Note 1: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,

extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 3 A to 8 A.

5. Guaranteed ESD Protection (Note)

Guaranteed ESD Protection (Note)

Test Condition

IEC61000-4-2 (Contact discharge)

ESD Protection

±8 kV

Note:

Criterion: No damage to devices.

2014-04-15

Rev.3.0

DF2S6.8UCT датащи(PDF) 2 Page - Toshiba Semiconductor

DF2S6.8UCT датащи(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL