CJ1012-G datasheet(2/5 Pages) COMCHIP

2 / 5 page

Symbol

Parameter

Conditions

Min

Max

Units

Drain-source breakdown voltage

700

VGS =0V , ID=250µA

Zero gate voltage drain current

Forward transconductance

Reverse transfer capacitance (note 4)

Input capacitance (note 4)

Turn-on delay time

Turn-off delay time

Rise time

Fall time

VDS =VGS , ID=250µA

VDS =16V , VGS=0V

VGS=4.5V , ID=600mA

VDS=10V , ID=400mA

V(BR) DSS

IDSS

RDS(on)

gFS

Coss

Crss

td(on)

td(off)

1.2

100

mΩ

ciss

100

Page 2

MOSFET

Dynamic Characteristics

VGS=2.5V , ID=500mA

850

Output capacitance (note 4)

Typ

On/Off States

Electrical Characteristics (at TA=25°C unless otherwise noted)

0.45

Gate-threshold voltage

VGS(th)

Gate

leakage current

-body

VDS =0V , VGS=±4.5V

IGSS

±1

µA

Drain-source on-state resistance

Drain-source diode forward voltage (note 5)

IS=0.15A , VGS=0V

VSD

1.2

Drain-source diode characteristics

1. Repetitive rating: Pulse width limited by maximum junction temperature.

Notes:

2. This test is performed with no heat sink at Ta=25°C.

3. This test is performed with infinite heat sink at Tc=25°C.

4. These parameters have no way to verify.

Switching Times (note 4)

Total gate charge

750

Gate-source charge

Qgs

Gate-drain charge

Qgd

225

VDS=16V , VGS=0V,

f=1MHZ

VDS=10V , VGS=4.5V,

ID=250mA

VDD=10V , ID=200mA

VGS=4.5V , RG=10Ω

RL=47Ω ,

5. Pulse test: Pulse width

≤300µs, Duty cycle≤0.5%.

REV:A

QW-BTR44

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

CJ1012-G датащи(PDF) 2 Page - Comchip Technology

CJ1012-G датащи(HTML) 2 Page - Comchip Technology

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL