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TCS20DPR датащи(PDF) 3 Page - Toshiba Semiconductor |
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TCS20DPR датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page ![]() TCS20DPR 2014-03-01 3 DC Characteristics (Ta = 25°C) Characteristics Symbol Condition VCC (V) Min Typ. Max Unit 2.3 2.0 ⎯ ⎯ 2.5 2.2 ⎯ ⎯ 3.3 2.9 ⎯ ⎯ 3.6 3.2 ⎯ ⎯ High Level VOH IOH = −1.0 mA 5.0 4.5 ⎯ ⎯ 2.3 ⎯ ⎯ 0.23 2.5 ⎯ ⎯ 0.25 3.3 ⎯ ⎯ 0.33 3.6 ⎯ ⎯ 0.36 Output Voltage Low Level VOL IOL = 1.0mA 5.0 ⎯ ⎯ 0.50 V 2.3 ⎯ 7.3 13.2 2.5 ⎯ 8.5 ⎯ 3.3 ⎯ 12.8 ⎯ Average Current ICC Current at pulse driving (Note 3, Fig. A) 5.0 ⎯ 19.0 ⎯ μA 2.3 ⎯ 0.7 1.1 2.5 ⎯ 0.8 ⎯ 3.3 ⎯ 1.2 ⎯ Supply Current Operating Current ICCON Peak current (Note 3, Fig. A) 5.0 ⎯ 1.6 ⎯ mA Operating Frequency fopr (Fig. A) 2.3 to 5.0 ⎯ 25 ⎯ Hz Note 3: Supply current is pulsed periodically by internal circuit. Magnetic Characteristics (Ta = 25°C) Characteristics Symbol Condition (Note 4, Fig. B) VCC (V) Min Typ. Max Unit 2.3 to 3.6 ⎯ 3.4 4.4 Operating Point BONS |BONN| When output logic turns High to Low 5.0 ⎯ 2.8 4.4 2.3 to 3.6 0.9 2.0 ⎯ Releasing Point BOFFS |BOFFN| When output logic turns Low to High 5.0 0.4 1.5 ⎯ Magnetic Flux Density, B Hysteresis BH |BON - BOFF| 2.3 to 5.0 ⎯ 1.4 ⎯ mT* *1 mT=10 Gauss Note 4: Uniform magnetic field perpendicularly to the magnetic sensor. |
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