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DMNH10H028SPSQ датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMNH10H028SPSQ
подробное описание детали  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH10H028SPSQ датащи(HTML) 4 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMNH10H028SPSQ
Document number: DS38226 Rev. 1 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMNH10H028SPSQ
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=10V, ID=10A
V
GS=10V, ID=20A
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D=250µA
I
D=1mA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V,
T
A=-55℃
V
GS=0V,
T
A=25℃
V
GS=0V,
T
A=85℃
V
GS=0V,
T
A=125℃
V
GS=0V,
T
A=150℃
V
GS=0V,
T
A=175℃
10
100
1000
10000
0
10
20
30
40
50
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 11. Gate Charge
V
DS=50V, ID=20A
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Tj,(Max)=175℃
Tc=25℃
Single Pulse
DUT on 1*MRP
board
V
GS=10V
R
DS(ON) Limited
P
W=10s
T
J(Max)=175℃
T
C=25℃
Single Pulse
DUT on 1*MRP
board
V
GS=10V
R
DS(ON) Limited
DC
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms



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