Small Signal Transistor

RoHS Device

Features

-Power dissipation

-Collector current

-Collector-base voltage

BC857W= -50V

BC858W= -30V

-Operating and storage junction temperature

Mechanical data

-Case: SOT-323, molded plastic.

-Terminals: solderable per MIL-STD-750,

method 2026.

Circuit diagram

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Storage Temperature Range

Units

Symbol

Parameter

Value

3

1

2

-80

-50

-30

-65

-45

-30

-5

150

V

V

V

A

mW

Dimensions in inches and (millimeter)

SOT-323

1

2

3

0.087 (2.20)

0.079 (2.00)

0.096 (2.45)

0.085 (2.15)

0.016 (0.40)

0.008 (0.20)

0.053(1.35)

0.045(1.15)

0.039 (1.00)

0.035 (0.90)

0.010 (0.26)

0.004 (0.10) max

0.006 (0.15)

0.003 (0.08)

0.055 (1.40)

0.047 (1.20)

0.018 (0.46)

Junction Temperature

150

Collector Power Dissipation

BC856W-G

BC858W-G

BC857W-G

BC856W-G

BC858W-G

BC857W-G

-0.1

-1.BASE

-2.EMITTER

-3.COLLECTOR

-65 to +150

-Ideally suited for automatic insertion

-For Switching and AF Amplifier Applications

Comchip Technology CO., LTD.

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Company reserves the right to improve product design , functions and reliability without notice.