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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LS5912C датащи(PDF) 1 Page - Linear Integrated Systems |
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LS5912C датащи(HTML) 1 Page - Linear Integrated Systems |
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1 / 3 page  Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201132 11/18/15 Rev#A8 ECN# LS5911 LS5912 LS5912C FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation (Total)4 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP LS5911 LS5912 LS5912C UNIT CONDITIONS MIN MAX MIN MAX MIN MAX BVGSS Gate to Source Breakdown Voltage -25 -25 -25 V IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 VDS = 10V, ID = 1nA VGS(F) Gate to Source Forward Voltage 0.7 IG = 1mA, VDS = 0V VGS Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4 VDG = 10V, IG = 5mA IDSS Drain to Source Saturation Current2 7 40 7 40 7 40 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current -1 -50 -50 -50 pA VGS = -15V, VDS = 0V IG Gate Operating Current -1 -50 -50 -50 VDG = 10V, ID = 5mA IG1G2 Gate to Gate Isolation Current ±1 ±1 ±1 uA VG1-VG2=±25VID = IS = 0 MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC TYP LS5911 LS5912 LS5912C UNIT CONDITIONS MIN MAX MIN MAX MIN MAX GS2 GS1 V V Differential Gate to Source Cutoff Voltage 10 15 40 mV VDG = 10V, ID = 5mA ΔT V V Δ GS2 GS1 Differential Gate to Source Voltage Change with Temperature 20 40 40 µV/°C VDG = 10V, ID = 5mA TA = -55 to +125°C DSS2 DSS1 I I Saturation Drain Current Ratio 0.95 1 0.95 1 0.95 1 VDS = 10V, VGS = 0V Notes 2, 3 G2 G1 I I Differential Gate Current 20 20 20 nA VDG = 10V, ID = 5mA TA = +125°C fs 2 fs 1 g g Forward Transconductance Ratio 0.95 1 0.95 1 0.95 1 VDS = 10V, ID = 5mA f = 1kHz3 CMRR Common Mode Rejection Ratio 85 dB VDG = 5V to 10V ID = 5mA LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER 1 3 2 SOT-23 TOP VIEW 6 4 5 S2 D2 G2 G1 D1 S1 1 2 3 4 8 7 6 5 PDIP-A S1 D1 SS G1 G2 SS D2 S2 1 2 3 4 8 7 6 5 SOIC-A S1 D1 SS G1 G2 SS D2 S2 1 2 3 4 8 7 6 5 PDIP-B S1 D1 G1 NC NC G2 D2 S2 1 2 3 4 8 7 6 5 SOIC-B S1 D1 G1 NC NC G2 D2 S2 TOP VIEW SOT-23 TOP VIEW |
Аналогичный номер детали - LS5912C |
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Аналогичное описание - LS5912C |
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