LS845 datasheet(1/2 Pages) LINEAR

номер детали	LS845

подробное описание детали	ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

PDF	2 Pages

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производитель	LINEAR [Linear Integrated Systems]

домашняя страница	http://www.linearsystems.com

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Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201144 04/07/2014 Rev#A12 ECN# LS843 LS844 LS845

FEATURES

ULTRA LOW NOISE

en=3nV/Hz TYP.

LOW LEAKAGE

IG=15pA TYPs.

LOW DRIFT

I VGS1-2/TI=5µV/ºC max.

ULTRA LOW OFFSET VOLTAGE

IVGS1-2I=1mV max.

ABSOLUTE MAXIMUM RATINGS1

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

-55º to +150°C

Operating Junction Temperature

-55º to +150°C

Maximum Voltage and Current for Each Transistor1

-VGSS

Gate Voltage to Drain or Source 60V

IG(f)

Gate Forward Current

50mA

Maximum Power Dissipation2

Device Dissipation2 @ Free Air - Total

400mW TA=+25°C

ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)

SYMBOL

CHARACTERISTIC

LS843 LS844 LS845 UNITS

CONDITIONS

I VGS1-2 / TI max.

Drift vs. Temperature

5

10

25

µV/ºC

VDG= 10V

ID= 500µA

TA= -55ºC to +125ºC

IVGS1-2I max.

Offset Voltage

1

5

15

mV

VGS= 10V

ID= 500µA

SYMBOL

CHARACTERISTIC3

MIN.

TYP.

MAX.

UNITS

CONDITIONS

BVGSS

Breakdown Voltage

-60

--

V

VDS= 0

ID= -1nA

BVGGO

Gate-to-Gate Breakdown

±60

--

V

IGGO= ±1µA ID= 0

IS= 0

TRANSCONDUCTANCE

Gfss

Full Conduction

1500

--

µS

VDS= 15V

VGS= 0

f = 1kHz

Gfs

Typical Conduction

1000

1500

--

µS

VDS= 15V

ID= 500µA

│Gfs1-2/Gfs1│

Mismatch

--

0.6

3

%

DRAIN CURRENT

VDS= 15V

VGS= 0

IDSS

Full Conduction

1.5

5

15

mA

│IDSS1-2/IDSS│

Mismatch at Full Conduction

--

1

5

%

GATE VOLTAGE

VGS(off)

Pinchoff Voltage

-1

--

-3.5

V

VDS= 15V

ID= 1nA

VGS

Operating Range

-0.5

--

-3.5

V

VDS= 15V

ID= 500µA

GATE CURRENT

-IG

Operating

--

15

50

pA

VDG= 15V

ID= 500µA

-IG

High Temperature

--

50

nA

VDG= 15V

ID= 500µA TA=+125ºC

-IG

Reduced VDG

--

5

30

pA

VDG= 3V

ID= 500µA

-IGSS

At Full Conduction

--

100

pA

VGS= 15V

VGS= 0

LS843 LS844 LS845

ULTRA LOW NOISE LOW DRIFT

MONOLITHIC DUAL N-CHANNEL

JFET AMPLIFIER

Аналогичный номер детали - LS845

производитель	номер детали	датащи	подробное описание детали
Linear Integrated Syste...	LS845	32Kb / 2P	ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components	LS845	284Kb / 1P	Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
	LS845_PDIP	284Kb / 1P	MONOLITHIC DUAL N-CHANNEL JFET
	LS845_SOIC	284Kb / 1P	MONOLITHIC DUAL N-CHANNEL JFET
	LS845_SOT-23	281Kb / 1P	MONOLITHIC DUAL N-CHANNEL JFET

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Аналогичное описание - LS845

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Linear Integrated Syste...	LS843-5	32Kb / 2P	ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components	2N3954	283Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
	SST404_PDIP	282Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
	U402_TO-71	287Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
	U405_TO-78	286Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
	U406_TO-71	286Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
	2N5905	292Kb / 1P	LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
	2N5906	292Kb / 1P	LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Syste...	LS3954A	289Kb / 2P	LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
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