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AP3P080N датащи(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP3P080N датащи(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 6 page ![]() AP3P080N 65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Ambient Fig 12. Transfer Characteristics Temperature 4 0 1 2 3 4 5 6 02 468 10 12 Q G , Total Gate Charge (nC) I D = -3A V DS = -15V 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) 0.01 0.05 0.1 0.2 Duty Factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 300℃/W 0 400 800 1200 1600 1 5 9 13172125 293337 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.02 0 1 2 3 4 5 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Operation in this area limited by RDS(ON) 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 2.4 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS = -5V T j = -55 o C . |
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