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SP3243E датащи(PDF) 8 Page - Sipex Corporation |
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SP3243E датащи(HTML) 8 Page - Sipex Corporation |
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8 / 14 page ![]() Rev.4/08/02 SP3249E Intelligent +3.0V to +5.5V RS-232 Transceivers © Copyright 2002 Sipex Corporation 8 — V DD charge storage — The third phase of the clock is identical to the first phase — the charge transferred in C 1 produces –VCC in the negative terminal of C 1, which is applied to the negative side of capacitor C 2. Since C 2 + is at V CC, the voltage potential across C 2 is 2 times VCC. Phase 4 (Figure 15) — V DD transfer — The fourth phase of the clock connects the negative terminal of C 2 to GND, and transfers this positive generated voltage across C 2 to C4, the VDD storage capacitor. This voltage is regulated to +5.5V. At this voltage, the internal oscillator is disabled. Simultaneous with the transfer of the voltage to C 4, the positive side of capacitor C 1 is switched to VCC and the negative side is connected to GND, allowing the charge pump cycle to begin again. The charge pump cycle will continue as long as the operational conditions for the internal oscillator are present. Since both V+ and V– are separately generated from V CC, in a no–load condition V + and V– will be symmetrical. Older charge pump approaches that generate V– from V+ will show a decrease in the magnitude of V– compared to V+ due to the inherent inefficiencies in the design. The clock rate for the charge pump typically operates at 500kHz. The external capacitors can be as low as 0.1 µF with a 16V breakdown voltage rating. Figure 11. Charge Pump — Phase 2 VCC = +5V –10V VSS Storage Capacitor VDD Storage Capacitor C1 C2 C3 C4 + + ++ – – – – VCC = +5V –5V –5V +5V VSS Storage Capacitor VDD Storage Capacitor C1 C2 C3 C4 + + ++ – – – – Figure 10. Charge Pump — Phase 1 Figure 12. Charge Pump Waveforms Ch1 2.00V Ch2 2.00V M 1.00 µs Ch1 1.96V 2 1 T T [] T 2 +6V a) C2+ b) C2- -6V 0V 0V |
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