Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54526P/FP

7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Collector-emitter breakdown voltage

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

V

V

µA

—

V

V

V

Parameter

—

—

—

0

8

0

50

25

0.5

Limits

min

typ

max

Symbol

Unit

0

0

—

—

400

200

mA

Symbol

Unit

Parameter

Test conditions

Limits

min

max

50

—

—

—

—

—

—

1000

—

1.3

0.95

0.9

2.8

1.5

—

2500

—

2.4

1.6

1.5

4.1

2.4

100

—

V

mA

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

ns

ns

—

—

12

230

—

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

PG

50

Ω

Measured device

OPEN

INPUT

OUTPUT

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

connections and input capacitance at probes

ton

50%

50%

50%

50%

toff

INPUT

OUTPUT

“H” input voltage

“L” input voltage

Output voltage

Collector current

(Current per 1 cir-

cuit when 7 circuits

are coming on si-

multaneously)

Duty Cycle

P : no more than 8%

FP : no more than 6%

Duty Cycle

P : no more than 30%

FP : no more than 25%

µA

°C

Collector-emitter saturation voltage

Input current

Turn-on time

Turn-off time