Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼

▼

▼

▼

Low Gate Charge

30V

▼

▼

▼

▼

Simple Drive Requirement

6mΩ

▼

▼

▼

▼

Fast Switching Characteristic

75A

▼

▼

▼

▼

RoHS Compliant & Halogen-Free

Description

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

1.4

℃/W

Rthj-a

40

℃/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

62

℃/W

Data & specifications subject to change without notice

AP85T03GS/P-HF

Thermal Data

Parameter

Operating Junction Temperature Range

Storage Temperature Range

55

Pulsed Drain Current

1

350

Total Power Dissipation

107

-55 to 175

Linear Derating Factor

Gate-Source Voltage

+20

75

Rating

Halogen-Free Product

Drain-Source Voltage

30

201501157

0.7

1

-55 to 175

Maximum Thermal Resistance, Junction-ambient (PCB mount)

3

Parameter

G

D

S

G

D

S

TO-263(S)

G

D

S

TO-220(P)

AP85T03 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited

for high current application due to the low connection resistance. The

through-hole

version

(AP85T03GP)

are

available

for

low-profile

applications.