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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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10-R0126PA015SC-M628F40 датащи(PDF) 3 Page - Vincotech |
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10-R0126PA015SC-M628F40 датащи(HTML) 3 Page - Vincotech |
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3 / 16 page  10-R0126PA015SC-M628F40 10-RZ126PA015SC-M628F41 Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,5 1,93 2,3 Tj=150°C 2,23 Tj=25°C 0,01 Tj=150°C Tj=25°C 200 Tj=150°C Tj=25°C 86 Tj=150°C 85 Tj=25°C 34 Tj=150°C 35 Tj=25°C 202 Tj=150°C 272 Tj=25°C 70 Tj=150°C 124 Tj=25°C 1,18 Tj=150°C 1,76 Tj=25°C 0,81 Tj=150°C 1,39 Thermal resistance chip to heatsink per chip RthJH Phase-Change Material 1,38 K/W Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 1,63 K/W Tj=25°C 1,2 1,86 2,3 Tj=150°C 1,78 Tj=25°C 10 Tj=150°C 13 Tj=25°C 297 Tj=150°C 508 Tj=25°C 1,46 Tj=150°C 2,94 di(rec)max Tj=25°C 58 /dt Tj=150°C 45 Tj=25°C 0,57 Tj=150°C 1,18 Thermal resistance chip to heatsink per chip RthJH Phase-Change Material 1,78 K/W Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 2,09 K/W G Vincotech NTC Reference B-value K B(25/100) Tj=25°C 3560 K Tj=25°C 3500 B-value B(25/50) Tol. ±3% 85 V Tj=25°C % 4700 5 -5 200 15 0 tr td(off) VCE=VGE Erec Coss Crss Qrr trr QGate IGES tf Eon Eoff td(on) IRRM VF VGE(th) VCE(sat) ICES Rgint Input capacitance Output capacitance Turn-off energy loss per pulse Integrated Gate resistor Inverter Transistor Gate emitter threshold voltage Value Conditions Characteristic Values µC mWs A/µs f=1MHz Rgon=32 0 20 15 Rgoff=32 ±15 15 15 ±15 Turn-on energy loss per pulse Reverse recovered charge Inverter Diode Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Cies Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Collector-emitter cut-off current incl. Diode Fall time Turn-off delay time Turn-on delay time Rise time Gate-emitter leakage current Collector-emitter saturation voltage 1200 0 960 15 600 25 600 mW/K Power dissipation P mW 2 Rated resistance R Power dissipation constant Deviation of R25 ∆R/R Thermistor Rgon=32 15 15 0,0005 900 80 none Tj=25°C Tj=25°C Tj=25°C Tj=25°C V A nC nA V mA mWs ns pF ns 55 Tj=25°C 3 Revision: 2 Copyright by Vincotech |
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