SPP07N60C2 datasheet(1/14 Pages) INFINEON

номер детали	SPP07N60C2

подробное описание детали	Cool MOS??Power Transistor

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2002-08-12

Page 1

SPP07N60C2, SPB07N60C2

SPA07N60C2

Final data

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

Product Summary

650

V

RDS(on)

0.6

Ω

ID

7.3

A

VDS @ Tjmax

P-TO220-3-31

P-TO220-3-1

P-TO263-3-2

P-TO220-3-31

1

2

3

Marking

07N60C2

Type

Package

Ordering Code

SPP07N60C2

P-TO220-3-1

Q67040-S4309

SPB07N60C2

P-TO263-3-2

Q67040-S4310

SPA07N60C2

P-TO220-3-31 Q67040-S4331

Maximum Ratings

Parameter

Symbol

Value

Unit

SPA

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

7.3

4.6

7.31)

4.61)

A

Pulsed drain current, tp limited by Tjmax

ID puls

14.6

A

Avalanche energy, single pulse

ID=5.5A, VDD=50V

EAS

230

mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=7.3A, VDD=50V

EAR

0.5

Avalanche current, repetitive tAR limited by Tjmax

IAR

7.3

A

Reverse diode dv/dt

IS = 7.3 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C

dv/dt

6

V/ns

Gate source voltage

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

83

32

W

SPP_B

Operating and storage temperature

Tj , Tstg

-55...+150

°C

Аналогичный номер детали - SPP07N60C2

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPP07N60C3	374Kb / 14P	Cool MOS??Power Transistor Rev. 2.1 2004-04-07
	SPP07N60C3	1Mb / 15P	New revolutionary high voltage technology Ultra low gate charge Rev. 3.1 2007-08-30
	SPP07N60C3	625Kb / 15P	New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 3.2 2009-11-27
Inchange Semiconductor ...	SPP07N60C3	339Kb / 2P	N-Channel MOSFET Transistor
Infineon Technologies A...	SPP07N60C3	1Mb / 15P	New revolutionary high voltage technology Ultra low gate charge Rev. 3.1 2007-08-30

More results

Аналогичное описание - SPP07N60C2

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPP07N60C3	374Kb / 14P	Cool MOS??Power Transistor Rev. 2.1 2004-04-07
	SPP08N50C3	265Kb / 13P	Cool MOS??Power Transistor 2003-06-27
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	SPW11N60S5	251Kb / 11P	Cool MOS??Power Transistor Rev. 2.1 2004-03-30
	SPW15N60C3	240Kb / 11P	Cool MOS Power Transistor 2003-09-17
	SPW16N50C3	244Kb / 11P	Cool MOS Power Transistor 2003-06-30
	SPW17N80C3	257Kb / 11P	Cool MOS??Power Transistor Rev. 2.1 2004-03-03
	SPW32N50C3	257Kb / 11P	Cool MOS Power Transistor Rev. 2.0 Page 2004-03-16
	SPP11N60C3	662Kb / 15P	Cool MOS??Power Transistor Rev. 2.6 2005-09-21

More results

SPP07N60C2 датащи(PDF) 1 Page - Infineon Technologies AG

SPP07N60C2 датащи(HTML) 1 Page - Infineon Technologies AG

Аналогичный номер детали - SPP07N60C2

Аналогичное описание - SPP07N60C2

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