SPD08P06P datasheet(2/9 Pages) INFINEON

номер детали	SPD08P06P

подробное описание детали	SIPMOS Power-Transistor

PDF	9 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2 / 9 page

1999-11-22

Page 2

SPD08P06P

SPU08P06P

Preliminary data

Thermal Characteristics

Parameter

Symbol

Unit

Values

min.

max.

typ.

Characteristics

RthJC

3.6

Thermal resistance, junction - case

K/W

100

RthJA

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

Electrical Characteristics, at

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = -250 µA

V(BR)DSS

-60

Gate threshold voltage,

VGS = VDS

ID = -250 µA, Tj = 25 °C

-2.1

-3

-4

VGS(th)

Zero gate voltage drain current

VDS = -60 V, VGS = 0 V, Tj = 25 °C

VDS = -60 V, VGS = 0 V, Tj = 150 °C

µA

-1

-100

IDSS

-0.1

-10

IGSS

-10

-100

Gate-source leakage current

VGS = -20 V, VDS = 0 V

Drain-source on-state resistance

VGS = -10 V, ID = -6.2 A

RDS(on)

0.23

0.3

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

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