MMBTA13 datasheet(2/4 Pages) INFINEON

номер детали	MMBTA13

подробное описание детали	NPN Silicon Darlington Transistors

PDF	4 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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SMBTA13/ MMBTA13, SMBTA14/ MMBTA14

Feb-18-2002

Electrical Characteristics

at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

V(BR)CES

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

100

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

µA

Emitter cutoff current

VEB = 10 V, IC = 0

IEBO

100

DC current gain 1)

IC = 10 mA, VCE = 5 V

IC = 100 mA, VCE = 5 V

SMBTA13

SMBTA14

SMBTA13

SMBTA14

hFE

5000

10000

20000

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VCEsat

1.5

Base-emitter saturation voltage 1)

IC = 100 mA, IB = 0.1 mA

VBEsat

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

125

MHz

1) Pulse test: t

≤ 300µs, D = 2%

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