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Subject to change without notice.

www.cree.com/rf

CGH40120P

120 W, RF Power GaN HEMT

Cree’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications. GaN

HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the

CGH40120P ideal for linear and compressed amplifier circuits. The transistor is

available in a metal-ceramic pill package.

FEATURES

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 120 W Typical P

SAT

• 70 % Efficiency at P

SAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

Package Types: 440206

PN: CGH40120P