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CGH40120F датащи(PDF) 7 Page - Cree, Inc

номер детали CGH40120F
подробное описание детали  120 W, RF Power GaN HEMT
PDF  13 Pages
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производитель  CREE [Cree, Inc]
домашняя страница  http://www.cree.com/
Logo CREE - Cree, Inc

CGH40120F датащи(HTML) 7 Page - Cree, Inc

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CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGH40120F CW Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Source and Load Impedances
Frequency (MHz)
Z Source
Z Load
500
2 + j3.3
5.14 + j0.04
1000
0.81 + j0.18
4.68 - j0.26
1500
0.75 - j1.56
3.44 - j0.77
2000
0.84 - j3
2.34 - j0.95
2500
1.2 - j4.43
2.7 - j2.56
3000
1.09 - j5.9
3.06 - j3.82
Note 1. V
DD = 28V, IDQ = 1.0 A in the 440193 package.
Note 2. Optimized for power gain, P
SAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used to maintain
amplifier stability.
D
Z Source
Z Load
G
S
60
80
100
120
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0
25
50
75
100
125
150
175
200
225
250
Maximum Temperature (°C)
Note 1



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