ACE7407A datasheet(3/7 Pages) ACE

номер детали	ACE7407A

подробное описание детали	P-Channel Enhancement Mode MOSFET

PDF	7 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE7407A

P-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.35

-0.8

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V, VGS=0V

-1

VDS=-20V, VGS=0V TJ=55℃

-5

VDS≧-5V, VGS=-4.5V

-6

Drain-Source

On-Resistance

RDS(ON)

VGS=-4.5V, ID=-3.4A

0.080

0.100

VGS=-2.5V, ID=-2.4A

0.105

0.125

VGS=-1.8V, ID=-1.7A

0.130

0.150

VGS=-1.25V, ID=-1.0A

0.180

0.22

Forward

Transconductance

Gfs

VDS=-5V,ID=-2.8A

Diode Forward Voltage

VSD

IS=-1.5A, VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

VDS=-6V, VGS=-4.5V, ID=-2.8A

4.8

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

1.0

Input Capacitance

Ciss

VDS=-6V, VGS=0V, f=1MHz

485

Output Capacitance

Coss

Reverse Transfer

Capacitance

Crss

Turn-On Time

td(on)

VDD=-6V, RL=6

Ω, V

GEN=-4.5V,

ID=-1.0A ,RG=6

Turn-Off Time

td(off)

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