ACE4490M datasheet(3/7 Pages) ACE

номер детали	ACE4490M

подробное описание детали	N-Channel 100-V MOSFET

PDF	7 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE4490M

N-Channel 100-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

3.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V

VDS = 80 V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-Resistance

RDS(ON)

VGS = 10 V, ID = 3.6 A

mΩ

VGS = 4.5 V, ID = 3.3 A

Forward Transconductance

gFS

VDS = 15 V, ID = 3.6 A

Diode Forward Voltage

VSD

IS = 1.5 A, VGS = 0 V

0.7

Dynamic

Total Gate Charge

VDS = 50 V, VGS = 4.5 V, ID = 3.6 A

17.7

Gate-Source Charge

Qgs

2.7

Gate-Drain Charge

Qgd

11.1

Turn-On Delay Time

td(on)

VDS = 50 V, RL = 13.9 Ω, ID = 3.6 A, VGEN

= 10 V, RGEN = 6 Ω

Rise Time

5.8

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

990

Output Capacitance

Coss

115

Reverse Transfer Capacitance

Crss

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

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