ACE3401D datasheet(2/6 Pages) ACE

номер детали	ACE3401D

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE3401D

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off characteristics

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate-Body Leakage, Forward

IGSSF

VGS=-20V

-100

Gate-Body Leakage, Reverse

IGSSR

VGS=20V

100

On characteristics

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-4.2A

mΩ

VGS=-4.5V, ID=-4A

VGS=-2.5V, ID=-1A

120

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.7

-1.0

-1.3

Switching characteristics

(3)

Turn-On Delay Time

Td(on)

VDD=-15V,RL=3.6Ω

VGS=-10V, RGEN=6Ω

6.5

Turn-On Rise Time

3.5

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Dynamic characteristics

(3)

Input Capacitance

Ciss

VDS=-30V, VGS=0V

f=200KHz

600

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

566

Drain-source diode characteristics and maximum ratings

Body Diode Forward Voltage

VSD

VSD=0V, IS=-1A

-0.78

-1

Note:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board

design.

Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%

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