ACE2600B datasheet(1/6 Pages) ACE

номер детали	ACE2600B

подробное описание детали	Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE2600B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

1

Description

The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD

protected.

Features

 V

DS(V)=20V

 I

D=6A (VGS=4.5V)

 R

DS(ON)＜22mΩ (VGS=4.5V)

 R

DS(ON)＜26mΩ (VGS=2.5V)

 R

DS(ON)＜34mΩ (VGS=1.8V)

 ESD Protected: 2000V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±8

V

Drain Current (Continuous) * AC

TA=25

OC

ID

6

A

TA=70

OC

4.8

Drain Current (Pulse) * B

IDM

30

Power Dissipation

TA=25

OC

PD

1.3

W

TA=70

OC

0.8

Operating and Storage Temperature Range TJ,TSTG -55 to 150

OC

Packaging Type

SOT-23-6L

Аналогичный номер детали - ACE2600B

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