PTF080451 datasheet(2/9 Pages) INFINEON

номер детали	PTF080451

подробное описание детали	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

PDF	9 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2 / 9 page

Data Sheet

2 of 9

2004-06-24

PTF080451

DC Characteristics at TCASE = 25°C unless otherwise indicated

Characteristic

Conditions

Symbol

Min

Typ

Max

Units

Drain–Source Breakdown Voltage

VGS = 0 V, IDS = 10 µA

V(BR)DSS

—

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

On–State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.1

—

Ω

Operating Gate Voltage

VDS = 28 V, IDQ = 450 mA

VGS

2.5

3.2

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain–Source Voltage

VDSS

Gate–Source Voltage

VGS

–0.5 to +12

Junction Temperature

200

°C

Total Device Dissipation

184

Above 25°C derate by

1.05

W/°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RθJC

0.95

°C/W

Modulation Spectrum

POUT = 20 W, f = 959.8 MHz

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

0.25

0.35

0.45

0.55

0.65

0.75

Quiescent Current (A)

-100

-90

-80

-70

-60

-50

-40

-30

-20

EVM

400 KHz

600 KHz

EDGE EVM Performance

VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz

Output Power (dBm)

EVM

Efficiency

Typical Performance (measurements taken in production test fixture)

All published data at TCASE = 25°C unless otherwise indicated.

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