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STWBCTR датащи(PDF) 20 Page - STMicroelectronics

номер детали STWBCTR
подробное описание детали  Digital controller for wireless battery charger
PDF  36 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STWBCTR датащи(HTML) 20 Page - STMicroelectronics

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Electrical characteristics
STWBC
20/36
DocID027322 Rev 3
5.3.3
Memory characteristics
Flash program and memory/data E2PROM memory
General conditions: TA = -40 °C to 105 °C.
Table 10. Flash program memory/data E2PROM memory
Symbol
Parameter
Conditions
Min.(1) Typ.(1) Max.(1)
Unit
tPROG
Standard programming time (including erase)
for byte/word/block (1 byte/4 bytes/128 bytes)
66.6
ms
Fast programming time for 1 block (128 bytes)
3
3.3
tERASE Erase time for 1 block (128 bytes)
3
3.3
ms
NWE
Erase/write cycles((2)(program memory)
TA = 25 °C
10 K
Cycles
Erase/write cycles(2)(data memory)
TA = 85 °C
100 K
TA = 105 °C
35 K
tRET
Data retention (program memory) after 10 K
erase/write cycles at TA= 25 °C
TRET = 85 °C
15
Years
Data retention (program memory) after 10 K
erase/write cycles at TA= 25 °C
TRET = 105 °C
11
Data retention (data memory) after 100 K
erase/write cycles at TA= 85 °C
TRET = 85 °C
15
Data retention (data memory) after 35 K
erase/write cycles at TA= 105 °C
TRET = 105 °C
6
IDDPRG
Supply current during program and erase
cycles
-40 ºC
 TA  105 ºC
2
mA
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.



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