This is information on a product in full production.

January 2016

DocID024698 Rev 3

1/8

8

STPSC8TH13TI

Dual 650 V power Schottky silicon carbide diode in series

Datasheet

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 Suited for specific bridge-less topologies

 High forward surge capability

 Insulated package:

– Capacitance: 7 pF

– Insulated voltage: 2500 V rms

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in specific bridge-less

topologies, this dual 650 V rectifier will boost the

performance in hard switching conditions. Its high

forward surge capability ensures a good

robustness during transient phases.

.

Table 1. Device summary (per diode)

Symbol

Value

8 A

650 V

175 °C

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